What is Dynamic AGE-ing®?
Core Functions of Dynamic AGE-ing®
The three proprietary functions of the Dynamic AGE-ing® method enableSiC wafer quality improvement and surface planarization control.
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1DA-Etching：Removal of subsurface damage layers caused by wafer fabrication
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2DA-Growth： Formation of a BPD/SF-free epitaxial layer
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3DA-Annealing：Surface planarization of SiC wafers
IGSF = In-Grown stacking fault
Effects of DA-Etching and DA-Growth Functions
When DA-Etching and DA-Growth are sufficiently applied,processing-induced damage is removed,and BPD and IGSF densities in the DA-grown layer can be reduced to near-zero levels.
SSD = Subsurface damage
ICSCRM2023（From Kwansei Gakuin University）
Non-Contact Planarization by DA-Annealing
By applying DA-Annealing to as-sliced wafers immediately after ingot cutting,CMP-equivalent planarization can be achieved.
ICSCRM2024
（Joint Exhibition by Kwansei Gakuin University and QureDA Research）